Fluctuations of the low frequency noise of MOS transistors and their modeling in analog and RF-circuits

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 159-162

  Brederlow, Ralf ^a   Weber, Werner ^a   Schmitt Landsiedel, Doris ^a   Thewes, Roland ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FERMI LEVEL; FREQUENCIES; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS;

LORENTZ FUNCTION; LOW FREQUENCY NOISE; SOFTWARE PACKAGE BSIM3; STATISTICAL FLUCTUATIONS;

MOSFET DEVICES;

EID: 0033314081     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)