Influence of dielectric constant distribution in gate dielectrics on the degradation of electron mobility by remote Coulomb scattering in inversion layers

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 736-740

  Ono, Mizuki ^a   Ishihara, Takamitsu ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Dielectric constant; High ; Mobility; Remote Coulomb scattering; Stacked layer gate dielectrics

Indexed keywords

COULOMB BLOCKADE; DIELECTRIC MATERIALS; ELECTRON MOBILITY; SCATTERING;

GATE DIELECTRICS; INVERSION LAYERS; REMOTE COULOMB SCATTERING;

PERMITTIVITY;

EID: 2442510040     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826863     Document Type: Article

References (20)

1. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai, "A 40 nm gate length n-MOSFET," IEEE Trans. Electron Devices, vol. 42, pp. 1822-1830, Oct. 1995.
2. K. Tsuji, K. Takeuchi, and T. Mogami, "High performance 50-nm physical gate length pMOSFETs by using low temperature activation by recrystallization scheme," in Symp. VLSI Tech. Dig., 1999, pp. 9-10.
3. K. Goto, Y. Sambonsugi, and T. Sugii, "Co Salicide compatible 2-step activation annealing process for deca-nano scaled MOSFETs," in Symp. VLSI Tech. Dig., 1999, pp. 49-50.
4. C. Caillat, S. Deleonibus, G. Guegan, S. Tedesco, B. Dal'zotto, M. Heitzmann, F. Martin, P. Mur, B. Marchand, and F. Balestra, "65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation," in Symp. VLSI Tech. Dig., 1999, pp. 89-90.
5. R. Chau, J. Kavalieros, B. Roberds, R. Schenker, D. Lionberger, D. Barlage, B. Doyle, R. Arghavani, A. Murthy, and G. Dewey, "30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays," in IEDM Tech. Dig., Dec. 2000, pp. 45-48.
6. H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida, K. Takeuchi, Y. Ochiai, T. Mogami,and T. Kunio, "45-nm gate length CMOS technology and beyond using steep halo," in IEDM Tech. Dig., Dec. 2000, pp. 49-52.
7. The International Technology Roadmap for Semiconductors: 2002 Update [Online] Available: http://public.itrs.net/
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, 2001.
9. T. Yamaguchi, H. Satake, and N. Fukushima, "Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET," in IEDM Tech. Dig., Dec. 2001, pp. 663-666.
10. 3 gate dielectric," in Symp. VLSI Tech. Dig., 2002, pp. 188-189.
11. B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Travel, J. A. Chroboczek, P. Masson, R. Truche, A. M. Papon, F. Martin, J. F. Damlencourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J. L. Autran, T. Skotnicki , and S. Deleonibus, "75 nm damascene metal gate and high-κ integration for advanced CMOS devices," in IEDM Tech. Dig., Dec. 2002, pp. 355-358.
12. 2 gate dielectric MOSFETs using deuterium anneal," in IEDM Tech. Dig., Dec. 2002, pp. 613-616.
13. y advanced gate dielectrics with Poly-Si gate electrode," in IEDM Tech. Dig., Dec. 2002, pp. 857-860.
14. 2O and NO oxynitrides," Jpn J. Appl. Phys., pt. 1, vol. 40, no. 4B, pp. 2597-2602, 2001.
15. 2 gate dielectric stacks during postdeposition oxidation," Appl. Phys. Lett., vol. 77, no. 12, pp. 1885-1887, 2000.
16. + poly-Si gates using chemical oxides and optimized post-annealing," in Symp. VLSI Tech. Dig., 2002, pp. 88-89.
17. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFETs: part I - effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, Dec. 1994.
18. S. Takagi, M. Takayanagi, and A. Toriumi, "Characterization of inversion-layer capacitance of holes in Si MOSFETs," IEEE Trans. Electron Devices, vol. 46, pp. 1446-1450, July 1999.
19. L. D. Landau and E. M. Lifschitz, Quantum Mechanics-Nonrelativistic Theory (Course on Theoretical Physics, Vol. 3). New York: Elsevier, 1981.
20. ____, Electrodynamics of Continuous Media 2nd Edition (Course of Theoretical Physics, Vol. 8). New York: Pergamon, 1984.