An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

Semiconductor Science and Technology

Volumn 20, Issue 10, 2005, Pages 1096-1102

  Herrera, M ^a   Gonzalez D ^a   Lozano, J G ^a   Gutierrez, M ^a   Garcia R ^a   Hopkinson, M ^b   Liu, H Y ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; INDIUM; MATHEMATICAL MODELS; PHASE SEPARATION; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITION FLUCTUATIONS; COMPOSITION INHOMOGENEITY; INDIUM CONTENT; SPINODAL DECOMPOSITION MODEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 25444437744     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/10/019     Document Type: Article

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