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Volumn 251, Issue 1-4, 2003, Pages 403-407

Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; Al. Characterization; Al. Diffusion; Al. Interfaces; B2. Semiconducting III V materials; Bl. Nitrides

Indexed keywords

DIFFUSION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037382425     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00973-4     Document Type: Conference Paper
Times cited : (17)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.