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Volumn 251, Issue 1-4, 2003, Pages 403-407
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Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
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Author keywords
A3. Molecular beam epitaxy; A3. Quantum wells; Al. Characterization; Al. Diffusion; Al. Interfaces; B2. Semiconducting III V materials; Bl. Nitrides
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Indexed keywords
DIFFUSION;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
SEMICONDUCTING GALLIUM ARSENIDE;
TRANSMISSION ELECTRON MICROSCOPY;
STRUCTURAL QUALITY;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0037382425
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(03)00973-4 Document Type: Conference Paper |
Times cited : (17)
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References (13)
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