Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 407-412

  Bullough, T J ^a   Davies, S ^a   Thomas, S ^a   Joyce, T B ^a   Chalker, P R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

III V growth; InGaAsN; Nitridation; Reflection anisotropy; STEM

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; COMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; MICROSTRUCTURE; NITRIDING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL ANISOTROPY;

SEMICONDUCTING FILMS;

EID: 0037345350     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00380-5     Document Type: Conference Paper

References (15)

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