Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 1-4

  Chalker, P R ^a   Davock, H ^a   Thomas, S ^a   Joyce, T B ^a   Bullough, T J ^a   Potter, R J ^b   Balkan, N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

A3. Chemical beam epitaxy; A3. Quantum well; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION EFFECTS; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUATERNARY SEMICONDUCTOR ALLOYS;

CHEMICAL BEAM EPITAXY;

EID: 0035502050     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01535-4     Document Type: Article

References (14)