Low temperature specific heat of GaP, InP, GaAs and InAs compounds

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 60, Issue 12, 1996, Pages 1181-1186

  Yamaguchi, Katsunori ^a   Chiba, Yoshiyuki ^a,b   Yoshizawa, Masahito ^a   Kameda, Kazuo ^a  

^a IWATE UNIVERSITY   (Japan)

^b FURUKAWA CO LTD   (Japan)

Author keywords

Adiabatic calorimeter; Debye temperature; GaAs; GaP; III V compound semiconductor; InAs; InP; Specific heat; Standard entropy

Indexed keywords

CALORIMETERS; ENTROPY; LOW TEMPERATURE PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECIFIC HEAT;

ADIABATIC CALORIMETER; DEBYE TEMPERATURE; GALLIUM PHOSPHIDE; INDIUM ARSENIC; INDIUM PHOSPHIDE;

SEMICONDUCTOR MATERIALS;

EID: 0030420920     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.60.12_1181     Document Type: Article

References (11)

1. U. Piesbergen: Z. Naturforsch., 18a(1963), 141.
2. J. C. Irwin and J. LaCombe: J. Appl. Phys., 45(1974), 567.
3. V. V. Tarassov and A. F. Demidenko: Phys. Status. Solidi, 30(1968), 147.
4. N. N. Sirota, V. V. Novikov and A. M. Antyukov: Dokl. Akad. SSSR., 263(1982), 96.
5. K. Yamaguchi, M. Yoshizawa, Y. Takeda, K. Kameda and K. Itagaki: Mater. Trans., JIM, 36(1995), 432.
6. R. Castanet, S. J. Collocott and G. K. White: CODATA Bulletin, No. 59, (1985), 3.
7. M. Neuberger: Handbook of Electronic Materials, Vol. 2, IFI/ Plenum, New York, (1971), 45, 93, 99, 108.
8. O. Knacke, O. Kubaschewski and K. Hesselmann: Thermochemical Properties of Inorganic Substances, Springer-Verlag, Berlin, (1991), 56, 61.
9. W. A. Harrison: Electronic Structure and the Properties of Solids, The Physics of the Chemical Bond, W. H. Freeman and Company, San Francisco, (1980), 173.
10. C. Kittel: Introduction to Solid State Physics, 4th ed., John Wiley and Sons, New York, (1967), 98.
11. K. Yamaguchi, Y. Takeda, K. Kameda and K. Itagaki: Mater. Trans., JIM, 35(1994), 596.