The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

Journal of Crystal Growth

Volumn 250, Issue 3-4, 2003, Pages 339-344

  Bian, L F ^a   Jiang, D S ^a   Lu, S L ^a   Huang, J S ^a   Chang, K ^a   Li, L H ^b   Harmand, J C ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CNRS   (France)

Author keywords

A3. Quantum wells; B1. GaInNAs; B2. Strain compensated GaNAs layers

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LUMINESCENCE EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037399520     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02464-8     Document Type: Conference Paper

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