Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 546-550

  Suemune, I ^a   Morooka, N ^a   Uesugi, K ^a   Ok, Y W ^b   Seong, T Y ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

GALLIUM ARSENIC NITRIDES; METALORGANIC MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034504522     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00775-2     Document Type: Article

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