Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties

Applied Physics Letters

Volumn 69, Issue 4, 1996, Pages 443-445

  Chin, Albert ^a   Chen, W J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITIONAL MODULATION; INDIUM GALLIUM ARSENIDE; LINEWIDTH; SURFACE MIGRATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030188892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118133     Document Type: Article

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