Diffusion of nitrogen in gallium arsenide

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 367-370

  Stolwijk, N A ^a   Bosker G ^a   Andersson, T G ^b   Sodervall U ^b  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Diffusion; GaAs; Interstitials; Nitrogen

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL LATTICES; DIFFUSION; DOPING (ADDITIVES); FILM GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NITROGEN; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INTERSTITIALS; SELF DIFFUSION PROCESSES; THIN FILM STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347134683     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.079     Document Type: Conference Paper

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