Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Herrera, M ^a   Gonzalez D ^a   Hopkinson, M ^b   Gutirrez M ^b   Navaretti, P ^b   Liu, H Y ^b   Garcia R ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL FLUCTUATIONS; ELASTIC ENERGY; EPITAXIAL LAYERS; SURFACE DIFFUSION;

APPROXIMATION THEORY; DECOMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; PHASE COMPOSITION; PHASE SEPARATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE MODULATION;

EID: 17444395202     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866491     Document Type: Article

References (33)

1. S. Wei and A. Zhunger, Phys. Rev. Lett. 76, 664 (1996).
2. A. Zunger and S. Mahajan, in Handbook on Semiconductors, edited by, T. S. Moss, (Elsevier, Amsterdam, 1994), Vol. 3, p. 1399.
3. J. W. Cahn, Acta Metall. 9, 795 (1961).
4. J. W. Cahn, Trans. Metall. Soc. AIME 242, 166 (1967).
5. G. B. Stringfellow, J. Cryst. Growth 58, 194 (1982).
6. K. Onabe, Jpn. J. Appl. Phys., Part 2 21, L323 (1982).
7. P. Ipatova, V. G. Malyshkin, and V. A. Shchukin, J. Appl. Phys. 74, 7198 (1993).
8. F. Glas, Phys. Rev. B 62, 7393 (2000).
9. V. G. Malyshkin and V. A. Shchukin, Semiconductors 27, 1062 (1993).
10. J. M. Millunchick and D. J. Srolovitz, Encyclopedia of Materials: Science and Technology (Elsevier, New York, 2004), p. 1.
11. D. Schlenker, Jpn. J. Appl. Phys., Part 1 39, 5751 (2000).
12. R. Asomoza, V. A. Elyukin, and R. Peña-Sierra, Appl. Phys. Lett. 81, 1785 (2002).
13. M. Herrera, D. González, M. Hopkinson, P. Navaretti, M. Gutírrez, H. Y. Liu, and R. García, Semicond. Sci. Technol. 19, 813 (2004).
14. T. L. McDevitt, S. Mahajan, D. E. Laughlin, W. A. Bonner, and V. G. Keramidas, Phys. Rev. B 45, 6614 (1992).
15. J. E. Guyer and P. W. Voorhees, J. Cryst. Growth 187, 150 (1998).
16. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Phys. Rev. B 64, 235318 (2001).
17. F. Leonard and R. C. Desai, Phys. Rev. B 57, 4805 (1998).
18. D. González, G. Aragón, D. Araújo, and R. García, Appl. Phys. Lett. 76, 3236 (2000).
19. I. Barin, O. Knacke, and O. Kubaschewski, Thermochemical Properties of Inorganic Substances (Springer, Berlin, 1977).
20. J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
21. Landolt-Börnstein, New Series Vol. 17d, edited by, M. Shulz, and, H. Weiss, (Springer, Berlin, 1984).
22. V. Grillo, M. Albrecht, T. Remmele, H. P. Strunk, A. Yu. Egorov, and H. Riechert, J. Appl. Phys. 90, 3792 (2001).
23. M. Albrecht, Appl. Phys. Lett. 81, 2719 (2002).
24. G. Patriarche, L. Largeau, J. C. Harmand, and D. Gollub, Appl. Phys. Lett. 84, 203 (2004).
25. J. Cagnon, P. A. Buffat, P. A. Stadelmann, and K. Leifer, Inst. Phys. Conf. Ser. 169, 37 (2001).
26. F. Glas, Inst. Phys. Conf. Ser. 180, 191 (2003).
27. M. H. Gass, A. J. Papworth, T. J. Bullough, and P. R. Chalker, Ultramicroscopy 101, 257 (2004).
28. P. R. Chalker, H. Davock, S. Thomas, T. B. Joyce, T. J. Bullough, R. J. Potter, and N. Balkan, J. Cryst. Growth 233, 1 (2001).
29. T. J. Bullough, S. Davies, S. Thomas, T. B. Joyce, and P. R. Chalker, Solid-State Electron. 47, 407 (2003).
30. R. S. Goldman, R. M. Feenstra, B. G. Briner, M. L. O'Steen, and R. J. Hauenstein, Appl. Phys. Lett. 69, 3698 (1996).
31. L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Ballet, P. Duvaut, G. Rolland, and A. Million, J. Appl. Phys. 91, 5902 (2002).
32. T. Matsuoka, T. Sasaki, and A. Katsui, Optoelectron., Devices Technol. 5, 53 (1990).
33. P. J. Klar, Prog. Solid State Chem. 31, 301 (2003).