Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

Applied Physics Letters

Volumn 84, Issue 2, 2004, Pages 203-205

  Patriarche, G ^a   Largeau, L ^a   Harmand, J C ^a   Gollub, D ^b  

^a CNRS   (France)

^b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL SYMMETRY; ELECTRON DIFFRACTION; HETEROJUNCTIONS; INDIUM ALLOYS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

DIFFRACTION PATTERNS; QUATERNARY ALLOYS; SELECTED AREA ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0842333245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1639510     Document Type: Article

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