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Volumn 188, Issue 1-2, 2002, Pages 36-48

Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

(9) Salviati, G a Ferrari, C a Lazzarini, L a Nasi, L a Drigo, A V b Berti, M b De Salvador, D b Natali, M c Mazzer, M a

a CNR (Italy)

b UNIVERSITY OF PADOVA (Italy)

c CNRS (France)

Author keywords

Compositionally graded buffers; Compressive strain; Cracks; Cross hatching; Grooves; Tensile strain

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; CRACKS; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 0037070653 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00726-7 Document Type: Article

Times cited : (27)

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