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Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 2093-2096

Effect of PECVD of SiO2 passivation layers on GaN and InGaP

(9) Baik, K H a Park, P Y a Luo, B b Lee, K P a Shin, J H a Abernathy, C R a Hobson, W S c Pearton, S J a Ren, F b

a UNIVERSITY OF FLORIDA (United States)

b University of Florida (United States)

c AGERE SYSTEMS (United States)

Author keywords

Hydrogen passivation; n GaN; n sp InGaP; PECVD; TLM

Indexed keywords

GALLIUM NITRIDE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICA; THERMAL EFFECTS;

SHEET RESISTANCE;

PASSIVATION;

EID: 0035545644 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00205-2 Document Type: Article

Times cited : (4)

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