Electrical isolation of GaN by ion implantation damage: Experiment and model

Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2441-2443

  Uzan Saguy, C ^a   Salzman, J ^a   Kalish, R ^a   Richter, V ^a   Tish, U ^a   Zamir, S ^a   Prawer, S ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000013903     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123874     Document Type: Article

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