State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs

Electronics Letters

Volumn 38, Issue 16, 2002, Pages 924-925

  Lee, C ^a   Wang, H ^b   Yang, J ^b   Witkowski, L ^a   Muir, M ^a   Khan, M A ^b   Saunier, P ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036684655     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020603     Document Type: Article

References (5)

1. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
2. GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm
3. Wide bandgap semiconductor devices and MMICs for RF power applications
4. Very-high power density AlGaN/GaN HEMTs
5. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs