The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2000, Pages 76-81

  Davies, R A ^a   Bazley, D J ^a   Jones, S K ^a   Lovekin, H A ^a   Phillips, W A ^a   Wallis, R H ^a   Birbeck, J C ^a   Martin, T ^a   Uren, M J ^a  

^a Marconi Caswell Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVE AMPLIFIERS; NATURAL FREQUENCIES; PASSIVATION; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SUBSTRATES;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0034445431     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)