Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiNx film

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1455-1461

  Hashizume, T ^a   Nakasaki, R ^a   Ootomo, S ^a   Oyama, S ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

ECR; GaN; Passivation; SiNx; Surface

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON NITRIDE; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE PASSIVATION; VALENCE BAND OFFSET;

ELECTRON DEVICES;

EID: 0035483665     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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