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Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 705-710

Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers

(5) Luo, B a Johnson, J W a Ren, F a Baik, K W b Pearton, S J b

a University of Florida (United States)

b UNIVERSITY OF FLORIDA (United States)

Author keywords

Breakdown voltage; GaN; Passivation; Plasma enhanced chemical vapor deposition; Rectifiers; Surface states

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LEAKAGE CURRENTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0036568257 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00320-3 Document Type: Article

Times cited : (8)

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