Low-temperature deposition of hafnium silicate gate dielectrics

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 1, 2004, Pages 89-100

  Punchaipetch, Prakaipetch ^a   Pant, Gaurang ^b   Quevedo Lopez, Manuel A ^c   Yao, C ^d   El Bouanani, Mohamed ^e   Kim, Moon J ^b   Wallace, Robert M ^b   Gnade, Bruce E ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b The University of Texas at Dallas   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d UNIVERSITY OF NORTH TEXAS   (United States)

^e Center for Advanced Research and Technology   (United States)

Author keywords

Hafnium silicate; High gate dielectrics; Low temperature processing; Sputtering; Stacked structure gate oxide; UV O3 oxidation

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; LOW TEMPERATURE PHENOMENA; OXIDATION; OZONE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTER DEPOSITION; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM SILICATE; HIGH-Κ GATE DIELECTRICS; LOW-TEMPERATURE PROCESSING; STACKED STRUCTURE GATE OXIDE; UV/O3 OXIDATION;

DIELECTRIC DEVICES;

EID: 2442484722     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.824109     Document Type: Article

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