An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 226-227

  McCormick, C S ^a   Weber, C E ^a   Abelson, J R ^a   Gates, S M ^b  

^a United States of America   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001596683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118373     Document Type: Article

References (18)

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