Polysilicon thin film transistors fabricated on low temperature plastic substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1946-1949

  Carey, Paul G ^a   Smith, Patrick M ^a   Theiss, Steven D ^a   Wickboldt, Paul ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PROCESS; GATE OXIDATION; HEAVILY DOPED; LASER CRYSTALLIZATION; LOW TEMPERATURES; MAXIMUM TEMPERATURE; PLASTIC SUBSTRATES; POLYSILICON THIN FILM TRANSISTORS; POST-FABRICATION; PROCESSING CLUSTERS; SOURCE/DRAIN REGIONS;

AMORPHOUS SILICON; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRON MOBILITY; FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS; VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 44249088148     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581708     Document Type: Conference Paper

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