Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 166-169

  Kato, H ^a   Nango, T ^a   Miyagawa, T ^a   Katagiri, T ^a   Ohki, Y ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILMS; HAFNIUM; PLASMA CVD; RECONFIGURABLE HARDWARE; SILICATES; VAPOR DEPOSITION; ZIRCON;

DEPOSITED FILMS; HIGH PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); SILICATE FILM; ZIRCONIUM SILICATE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 2442547028     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967575     Document Type: Conference Paper

References (10)

1. International Technology Roadmap for Semiconductors, International Sematech, 1999.
2. D. A. Muller, T. Sorsch, S. Morrio, F. H. Baunann, K. E. Lutterodt, and G. Timp: "The electronic structure at the atomic scale of ultrathin gate oxides", Nature, Vol. 399, pp. 758-761, 1999.
3. J. H. Stathis and D. J. DiMaria: "Reliability projection for ultra-thin oxides at low voltage", International Electron Device Meeting Tech. Dig., pp. 167-170, 1998.
4. 2", Appl. Phys. Lett., Vol. 69, pp. 2728-2730, 1996.
5. G. D. Wilk, R. M. Wallance, and J. M. Anthony: "Hafnium and zirconium silicates for advanced gate dielectrics", J. Appl. Phys., Vol. 87, pp. 484-492, 2000.
6. G. D. Wilk and R. M. Wallace: "Stable zirconium silicate gate dielectrics deposited directly on silicon", Appl. Phys. Lett., Vol. 76, pp. 112-114, 2000.
7. B. H. Lee, L. Kang, R. Nieh, W. J. Qi, and J. C. Lee: "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing", Appl. Phys. Lett., Vol. 76, pp. 1926-1928, 2000.
8. 2 gate dielectric deposited directly on Si", International Electron Device Meeting Tech. Dig., pp. 145-148, 1999.
9. 3 gate dielectric with equivalent oxide thickness of 5 Å", IEEE Electron Device Lett., 21, pp. 341-343, 2000.
10. 2 thermally grown on Si (100) and Si (111) surfaces", Appl. Surf. Sci., 113/114, pp. 585-589, 1997.