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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 3 A/B, 2000, Pages

High mobility thin film transistors fabricated on a plastic substrate at a processing temperature of 110°C

(3) Gosain, Dharam Pal a Noguchi, Takashi a Usui, Setsuo a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTALLIZATION; EXCIMER LASERS; HIGH TEMPERATURE OPERATIONS; PLASTICS; POLYSILANES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPUTTERING; SUBSTRATES;

EXCIMER LASER CRYSTALLIZATION; LASER IRRADIATION; LOW TEMPERATURE DOPING; PLASTIC SUBSTRATES; POLYSILICON; SPUTTERED FILM;

THIN FILM TRANSISTORS;

EID: 0033734517 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l179 Document Type: Article

Times cited : (140)

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