Characteristics of amorphous and polycrystalline silicon films deposited at 120° C by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1912-1916

  Bae, Sanghoon ^a   Kalkan, A Kaan ^a   Cheng, Shangcong ^a   Fonash, Stephen J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; ARGON DILUTION; COLUMNAR STRUCTURES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE PHASE; CRYSTALLINITIES; CRYSTALLIZED FILMS; ELECTRON CYCLOTRON RESONANCE PLASMA; HYDROGEN DILUTION; PHOTOLUMINESCENCE INTENSITIES; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON FILMS; RF BIAS; SUBSTRATE BIAS;

AMORPHOUS SILICON; ARGON; CHEMICAL VAPOR DEPOSITION; CYCLOTRONS; DILUTION; ELECTRON CYCLOTRON RESONANCE; PLASMA DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; RESONANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS FILMS;

EID: 0000139945     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581195     Document Type: Article

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