Si film electrical characterization in SOI substrates by the HgFET technique

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1311-1333

  Hovel, H J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Characterization; FETs; Material Qualification; Metrology; SOI

Indexed keywords

MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SURFACE TREATMENT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ELECTRICAL CHARACTERIZATION;

SEMICONDUCTING SILICON;

EID: 0037598585     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00065-0     Document Type: Article

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