Effects of hot-carrier degradation in analog CMOS circuits

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 285-292

  Thewes, Roland ^a   Weber, Werner ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; ELECTRIC NETWORK PARAMETERS; HOT CARRIERS; MOSFET DEVICES; STRESS ANALYSIS; ELECTRIC NETWORK ANALYSIS; ELECTRON ENERGY LEVELS; STRESSES;

ANALOGUE CIRCUITS; HOT CARRIER DEGRADATION; SINGLE TRANSISTOR STRESS; ANALOG SUBCIRCUITS; HOT CARRIER INDUCED PARAMETER SHIFTS;

CMOS INTEGRATED CIRCUITS;

EID: 0031150261     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00064-6     Document Type: Article

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