Sub-0.18 μm SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 113-114

  Cheng, Baohong ^a   Rao, V Ramgopal ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ELECTRIC FIELD EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THRESHOLD VOLTAGE;

LATERAL ASYMMETRIC CHANNEL PROFILE; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0032313799     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)