Realization of 0.1 μm asymmetric channel MOSFETs with excellent short-channel performance and reliability

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 520-523

  Cheng, B ^a   Ramgopal Rao, V ^a   Ikegami, B ^a   Woo, J C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; HOT CARRIERS; RELIABILITY;

2-D DEVICE SIMULATIONS; ASYMMETRIC CHANNEL DOPING; CONVENTIONAL MOSFETS; EXPERIMENTAL CHARACTERIZATION; HOT CARRIER RELIABILITY; LATERAL ELECTRIC FIELD; SHORT-CHANNEL EFFECT; SHORT-CHANNEL PERFORMANCE;

MOSFET DEVICES;

EID: 84908155589     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. C. C. Shen, J. Murguia, M. Packerar, J. Melngailis, DAAntoniadis, IEEE Trans. Devices, vol 45, p. 453, 1998 N. Goldsman, and on Electron
3. J. P. John, V. Ilderem, C. Park, J. Teplik, K. Klein, and S. Cheng, 1996 Symposium on VLSI Technology Digest of Technical Papers, p. 178
4. A. Hiroki, S. Odanaka, and A. Hori, 1995 IEDM Technical Digest, p. 439
5. V. Ramgopal Rao, W. Hansch and I. Eisele, 1997 IEDM Technical Digest, p. 811
6. ATLAS, 2-D Device simulator, SILVACO International, Santa Clara, CA