Time dependence power laws of hot carrier degradation in SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 18-19

  Sinha, Shankar P ^a   Duan, Franklin L ^a   Ioannou, Dimitris E ^a   Jenkins, William C ^a   Hughes, Harold L ^a  

^a GEORGE MASON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); MOSFET DEVICES; TRANSCONDUCTANCE;

HOT CARRIER DEGRADATION; PURE ELECTRON INJECTION; PURE HOLE INJECTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030386358     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)