A unified understanding on fully-depleted SOI NMOSFET hot-carrier degradation

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 206-212

  Banna, Srinivasa R ^a   Chan, Philip C H ^a   Chan, Mansun ^a   Fung, Samuel K H ^a   Ko, Ping K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Degradation; Fully depleted soi (fdsoi); Hot carrier

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

SEPARATION BY IMPLANTED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0031701010     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658832     Document Type: Article

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