Potential design and transport property of 0.1 μm MOSFET with asymmetric channel profile

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 595-600

  Odanaka, Shinji ^a   Hiroki, Akira ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ION IMPLANTATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

ASYMMETRIC CHANNEL PROFILE; THRESHOLD ADJUSTMENT IMPLANTATION; TILT ANGLE ION IMPLANTATION;

MOSFET DEVICES;

EID: 0031120671     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563364     Document Type: Article

References (19)

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