A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2146-2152

  Renn, Shing Hwa ^a   Raynaud, Christine ^a   Pelloie, Jean Luc ^b   Balestra, Francis ^b  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

Device lifetime; Hot carrier effects; SIMOX; SOI MOSFET; Unibond

Indexed keywords

AGING OF MATERIALS; HOT CARRIERS; SEMICONDUCTOR DEVICE TESTING; SILICON ON INSULATOR TECHNOLOGY;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0032188386     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725248     Document Type: Article

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