Hot-carrier effects in deep submicron SOI MOSFETs

Solid-State Electronics

Volumn 41, Issue 11, 1997, Pages 1769-1772

  Renn, S H ^a   Pelloie, J L ^b   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); MICROELECTRONICS; MOSFET DEVICES; PHOTONS; SEMICONDUCTING SILICON;

SOI; SUBMICRON LENGTHS;

SOLID STATE DEVICES;

EID: 0031272123     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00161-5     Document Type: Article

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