On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 696-699

  Renn, S H ^a   Pelloie, J L ^b   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON; DEGRADATION LAWS; EXTRAPOLATION TECHNIQUES; HOT CARRIER EFFECT; LIFETIME PREDICTION; SATURATION PHENOMENONS; SATURATION REGIME; TIME-DEPENDENT LAWS;

MOSFET DEVICES;

EID: 84907519739     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194524     Document Type: Conference Paper

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5. S. H. Renn, J. L. Pelloie and F. Balestra, IEDM Tech. Dig., p. 877, 1996.
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