Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4486-4488

  Kim, Soo Hyun ^a   Oh, Su Suk ^a   Kim, Ki Bum ^a   Kang, Dae Hwan ^a   Li, Wei Min ^b   Haukka, Suvi ^b   Tuominen, Marko ^b  

^a Seoul National University   (South Korea)

^b ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; COPPER; CRYSTAL LATTICES; DEPOSITION; ELECTRIC CONDUCTIVITY; METALLIZING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

DIFFUSION BARRIER;

THIN FILMS;

EID: 0038044822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1585111     Document Type: Article

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