TaC as a diffusion barrier between Si and Cu

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5391-5399

  Laurila, Tomi ^a   Zeng, Kejun ^a   Kivilahti, Jorma K ^a   Molarius, Jyrki ^b   Suni, Iikka ^b  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVITY DIAGRAM; AMORPHOUS LAYER; BARRIER LAYERS; CU DIFFUSION; CU METALLIZATION; FORMATION TEMPERATURE; HIGH STABILITY; METALLIZATION STRUCTURES; METALLIZATION SYSTEMS; REACTION MECHANISM; REACTION STRUCTURES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SHEET RESISTANCE MEASUREMENTS;

AMORPHOUS CARBON; DIFFUSION BARRIERS; METALLIZING; OXYGEN; PHASE DIAGRAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; TANTALUM OXIDES; TERNARY SYSTEMS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 0037091673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464652     Document Type: Article

References (39)

1. P. L. Pai and C. H. Ting, IEEE Electron Device Lett. 10, 423 (1989). edl EDLEDZ 0741-3106
2. M. B. Small and D. J. Pearson, IBM J. Res. Dev. 34, 858 (1990). ibm IBMJAE 0018-8646
3. E. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983). apa APSFDB 0721-7250
4. A. Broniatowski, Phys. Rev. Lett. 62, 3074 (1989). prl PRLTAO 0031-9007
5. J. Torres, Appl. Surf. Sci. 91, 112 (1995). asu ASUSEE 0169-4332
6. S. P. Murarka, Microelectron. Eng. 37, 29 (1997). mie MIENEF 0167-9317
7. K. Holloway and P. Fryer, Appl. Phys. Lett. 57, 1736 (1990). apl APPLAB 0003-6951
8. K. Holloway, P. Fryer, C. Cabral, J. Harper, P. Bailey, and K. Kelleher, J. Appl. Phys. 71, 5433 (1992). jap JAPIAU 0021-8979
9. B.-S. Kang, S.-M. Lee, J. Kwak, D.-S. Yoon, and H.-K. Baik, J. Electron. Mater. 144, 1807 (1997). jem JECMA5 0361-5235
10. D-S. Yoon, H-K. Baik, and S-M. Lee, J. Appl. Phys. 83, 1333 (1998). jap JAPIAU 0021-8979
11. L. Clevenger, N. Bojarczuk, K. Holloway, J. Harper, C. Cabral, R. Schad, F. Cardone, and L. Stolt, J. Appl. Phys. 73, 300 (1993). jap JAPIAU 0021-8979
12. T. Oku, E. Kawakami, M. Uekebo, K. Takahiro, S. Tamaguchi, and M. Murakami, Appl. Surf. Sci. 99, 265 (1996). asu ASUSEE 0169-4332
13. M. H. Tsai, S. C. Sun, C. E. Tsai, S. H. Chuang, and H. T. Chiu, J. Appl. Phys. 79, 6932 (1996). jap JAPIAU 0021-8979
14. K.-H. Min, K.-C. Chun, and K.-B. Kim, J. Vac. Sci. Technol. B 14, 3263 (1996). jvb JVTBD9 0734-211X
15. M. Takeyama, A. Noya, T. Sase, A. Ohta, and K. Sasaki, J. Vac. Sci. Technol. B 14, 674 (1996). jvb JVTBD9 0734-211X
16. J. Imahori, T. Oku, and M. Murakami, Thin Solid Films 301, 142 (1997). tsf THSFAP 0040-6090
17. H. Tsai, S. Sun, and S. Wang, J. Electrochem. Soc. 147, 2766 (2000). jes JESOAN 0013-4651
18. M.-A. Nicolet, Thin Solid Films 52, 415 (1978). tsf THSFAP 0040-6090
19. T. B. Massalski, Binary Alloy Phase Diagrams (American Society for Metals, Metals Park, OH, 1996).
20. H. J. Goldsmith, Interstitial Alloys (Butterworths, London, 1967).
21. T. Laurila, K. Zeng, J. K. Kivilahti, J. Molarius and I. Suni, 2000 Materials Research Society Spring Meeting, San Francisco, CA, 24-28 April 2000, Vol. 612, p. 97.
22. T. Laurila, K. Zeng, J. Molarius, I. Suni, and J. K. Kivilahti, J. Appl. Phys. 88, 3377 (2000). jap JAPIAU 0021-8979
23. J. Saarilahti and E. Rauhala, Nucl. Instrum. Methods Phys. Res. B 64, 734 (1992). nib NIMBEU 0168-583X
24. J. Saarilahti, Ph.D. thesis, University of Helsinki, Acta Polytechnica Scandinavica, PH 199, Finland, 1996.
25. J. G. M. Becht, Ph.D. thesis, Tech. University of Eindhoven, Netherlands, 1987.
26. J. Solberg, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 34, 684 (1978). aca ACACBN 0567-7394
27. P. Midgley and T. Laurila (private communication).
28. T. Laurila, K. Zeng, J. Molarius, I. Suni, and J. K. Kivilahti, Appl. Phys. Lett. 80, 938 (2002).
29. M. A. Nicolet, in Diffusion in Amorphous Materials, edited by H. Jain and D. Gupta (TMS Warrendale, 1994), pp. 225-234.
30. J. Burke, Acta Metall. 10, 501 (1962). ado AMETAR 0001-6160
31. J. Lacaze and B. Sundman, Metall. Trans. A 22, 2211 (1991). mta MTTABN 0360-2133
32. K. Frisk and A. F. Guillermet, J. Alloys Compd. 238, 167 (1996). jal JALCEU 0925-8388
33. L. Chandra Sekaran, SGTE databank (1987).
34. W. Wakelkamp, Ph.D. thesis, Tech. University of Eindhoven, Netherlands, 1991.
35. Phase Diagrams of Ternary Boron Nitride and Silicon Nitride Systems, edited by P. Rogl and J. C. Schuster (American Society for Metals, Metals Park, OH, 1992).
36. J. S. Kirkaldy and L. C. Brown, Can. Metall. Q. 2, 89 (1963). cmq CAMQAU 0008-4433
37. F. J. J. van Loo, Prog. Solid State Chem. 20, 47 (1990). psc PSSTAW 0079-6786
38. A. Christou and H. M. Day, J. Electron. Mater. 5, 1 (1976). jem JECMA5 0361-5235
39. C. R. Kao, J. Woodford, and Y. A. Chang, J. Mater. Res. 11, 850 (1996). jmr JMREEE 0884-2914