Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition: Diffusion barrier properties in copper metallization

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 170-176

  Kaloyeros, Alain E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL MICROSTRUCTURE; DIFFUSION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; HYDROGEN; METALLIZING; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

DIFFUSION BARRIERS; PHYSICAL VAPOR DEPOSITION (PVD); TANTALUM NITRIDE; TANTALUM PENTRABROMIDE;

METALLIC FILMS;

EID: 0032737992     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391582     Document Type: Article

References (3)

1. T. Nitta, T. Ohmi, S. Sakai, and T. Shibata, J. Electrochem. Soc., 140, 1131 (1993).
2. M. Takeyama, A. Noya. T. Sase, and A. Ohta, J. Vac. Sci. Technol., B, 14, 674 (1996).
3. CRC Handbook of Chemistry and Physics, 71th ed., D. Lide, Editor, pp. 4-109, CRC Press, Boston (1990-1991).