Atomic layer epitaxy growth of TiN thin films from TiI4 and NH3

Journal of the Electrochemical Society

Volumn 145, Issue 8, 1998, Pages 2914-2920

  Ritala, Mikko ^a,b   Leskelä, Markku ^a   Rauhala, Eero ^a   Jokinen, Janne ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b ELECTROCHEMICAL SOCIETY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRIC CONDUCTIVITY MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

ATOMIC LAYER EPITAXY; ENERGY DISPERSIVE X RAY (EDX) SPECTROSCOPY; TIME OF FLIGHT ELASTIC RECOIL DETECTION ANALYSIS; TITANIUM TETRAIODIDE;

SEMICONDUCTING FILMS;

EID: 0032138851     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838736     Document Type: Article

References (49)

1. A. Sherman, Jpn. J. Appl. Phys., 30, 3553 (1991).
2. E. O. Travis and R. F. Fiordalice, Thin Solid Films, 236, 325 (1993).
3. J. B. Price, J. O. Borland, and S. Selbrede, Thin Solid Films, 236, 311 (1993).
4. C. I. M. A. Spee, J. P. A. M. Driessen, and A. D. Kuypers, J. Phys. IV, 5, C5-719 (1995).
5. M. Eizenberg, MRS Bull., 38 (Nov 1995).
6. M. Eizenberg, Mater. Res. Soc. Symp. Proc., 427, 325 (1996).
7. T. Suntola, Thin Solid Films, 216, 84 (1992).
8. M. Leskelä and M. Ritala, J. Phys. IV, 5, C5-937 (1995).
9. L. Niinistö, M. Ritala, and M. Leskelä, Mater. Sci. Eng. B., 41, 23 (1996).
10. M. Ritala, Appl. Surf. Sci., 112, 223 (1997).
11. M. Ritala, M. Leskelä, E. Rauhala, and P. Haussalo, J. Electrochem. Soc., 142, 2731 (1995).
12. M. Ritala, T. Asikainen, M. Leskelä, J. Jokinen, R. Lappalainen, M. Utriainen, L. Niinistö, and E. Ristolainen, Appl. Surf. Sci., 120, 199 (1997).
13. R. I. Hegde, R. W. Fiordalice, E. O. Travis, and P. J. Tobin, J. Vac. Sci. Technol., B11, 1287 (1993).
14. P. Mårtensson and J.-O. Carlsson, Chem. Vap. Deposit., 3, 45 (1997).
15. P. Mårtensson and J.-O. Carlsson, in Chemical Vapor Deposition, M. D. Allendorf and C. Bernard, Editors, PV 97-25, p. 1529, The Electrochemical Society Proceedings Series, Pennington, NJ (1997).
16. C. Goldberg, E. Eisenbraun, S. Komarov, C. Faltermeier, X. Chen, M. Jones, A. Ivanova, R. Fiordalice, F. Pintchovski, B. Arkles, A. Hepp, and A. E. Kaloyeros, in Advanced Metallization for ULSI Application X, R. Blumenthal and G. Janssen, Editors, p. 247, MRS, Pittsburgh, PA (1995).
17. C. Faltermeier, C. Goldberg, M. Jones, A. Upham, D. Manger, G. Peterson, J. Lau, A. E. Kaloyeros, B. Arkles, and A. Paranjpe, J. Electrochem. Soc., 144, 1002 (1997).
18. J. E. Huheey, E. A. Keitler, and R. L. Keitler, Inorganic Chemistry. Principles of Structure and Bonding, pp. A21-A34, Harper Collins College Publishers, New York (1993).
19. Outokumpu HSC Chemistry for Windows program package, Version 1.10., Outokumpu Research Oy, Pori, Finland (1993).
20. R. A. Waldo, Microbeam Anal., 310 (1988).
21. E. Rauhala, J. Keinonen, K. Rakennus, and M. Pessa, Appl. Phys. Lett., 51, 973 (1987).
22. J. Jokinen, J. Keinonen, P. Tikkanen, A. Kuronen, T. Ahlgren, and K. Nordlund, Nucl. Instrum. Methods Phys. Res., Sect. B, 119, 533 (1996).
23. J. Jokinen, P. Haussalo, J. Keinonen, M. Ritala, D. Riihelä, and M. Leskelä, Thin Solid Films, 289, 159 (1996).
24. L. Hiltunen, M. Leskelä, M. Mäkelä, L. Niinistö, E. Nykänen, and P. Soininen, Thin Solid Films, 166, 149 (1988).
25. K.-E. Elers, M. Ritala, M. Leskelä, and E. Rauhala, Appl. Surf. Sci., 82/83, 468 (1994).
26. D. Riihelä, P. Kalsi, M. Ritala, M. Leskelä, and J. Jokinen, To be published.
27. K.-E. Elers, M. Ritala, M. Leskelä, and L.-S. Johansson, J. Phys. IV, 5, C5-1021 (1995).
28. D. Riihelä, M. Ritala, R. Matero, M. Leskelä, J. Jokinen, and P. Haussalo, Chem. Vap. Deposit., 2, 277 (1996).
29. M. Asif Khan, R. A. Skogman, J. M. Van Hove, D. T. Olson, and J. N. Kuznia, Appl. Phys. Lett., 60, 1366 (1992).
30. K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N.-A. El-Masry, Appl. Phys. Lett., 67, 1856 (1995).
31. H. Goto, K. Shibahara, and S. Yokoyama, Appl. Phys. Lett., 68, 3257 (1996).
32. S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda, and K. Shibahara, Appl. Surf. Sci., 112, 75 (1997).
33. S. Morishita, S. Sugahara, and M. Matsumura, Appl. Surf. Sci., 112, 198 (1997).
34. J. Saarilahti and E. Rauhala, Nucl. Instrum. Methods Phys. Res., Sect. B, 64, 734 (1992).
35. C. Ernsberger, J. Nickerson, T. Smith, A. E. Miller, and D. Banks, J. Vac. Sci. Technol., A4, 2784 (1986).
36. S. Logothetidis and A. Barborica, Microelectron. Eng., 33, 309 (1997).
37. Joint Committee on Powder Diffraction Standards, Card 38-1420, Swarthmore, PA.
38. J.-E. Sundgren, Thin Solid Films, 128, 21 (1985).
39. M. Ohring, The Materials Science of Thin Films, p. 552, Academic Press, Inc., San Diego, CA (1992).
40. R. Brown, in Handbook of Thin Film Technology, L. I. Maissel and R. Glang, Editors, p. 6-1, McGraw-Hill, Inc., New York (1983) (Reissued).
41. M. Ritala, M. Leskelä, L.-S. Johansson, and L. Niinistö, Thin Solid Films, 228, 32 (1993).
42. M. Ritala and M. Leskelä, Appl. Surf. Sci., 75, 333 (1994).
43. M. Ritala, M. Leskelä, L. Niinistö, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films, 250, 72 (1994).
44. T. Asikainen, M. Ritala, M. Leskelä, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Appl. Surf. Sci., 99, 91 (1996).
45. J. Ihanus, M. Ritala, M. Leskelä, T. Prohaska, R. Resch, G. Friedbacher, and M. Grasserbauer, App. Surf. Sci., 120, 43 (1997).
46. T. Akahori, A. Tanihara, and M. Tano, Jpn. J. Appl. Phys., 30, 3558 (1991).
47. I. J. Raaijmakers, Thin Solid Films, 247, 85 (1994).
48. M. Boumerzoug, P. Mascher, and J. G. Simmons, Appl. Phys. Lett., 66, 2664 (1995).
49. A. Weber, R. Nikulski, C.-P. Klages, M. E. Gross, W. L. Brown, E. Dons, and R. M. Charatan, J. Electrochem. Soc., 141, 849 (1994).