Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 247-253

  Smith, Steven ^a   Li, Wei Min ^b   Elers, Kai Erik ^b   Pfeifer, Klaus ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b ASM Microchemistry Oy   (Finland)

Author keywords

ALD; Atomic layer deposition; Copper diffusion barrier; TiN; WNC

Indexed keywords

ADHESION; COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; FILM GROWTH;

ATOMIC LAYER DEPOSITIONS;

METALLIC FILMS;

EID: 0036776638     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00796-7     Document Type: Conference Paper

References (7)

1. Aspects of ALD processes for metallic interconnects