WNx diffusion barriers between Si and Cu

Thin Solid Films

Volumn 286, Issue 1-2, 1996, Pages 170-175

  Uekubo, Masaki ^a,d   Oku, Takeo ^a   Nii, Kazushi ^a   Murakami, Masanori ^a   Takahiro, Katsumi ^b   Yamaguchi, Sadae ^b   Nakano, Tadashi ^c   Ohta, Tomohiro ^c  

^a KYOTO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JFE STEEL CORPORATION   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

Copper; Diffusion; Nitrides; Silicon

Indexed keywords

ANNEALING; COPPER; GRAIN BOUNDARIES; NITRIDES; POLYCRYSTALS; SILICON; THIN FILMS; TUNGSTEN COMPOUNDS;

DIFFUSION ANALYSIS; DIFFUSION BARRIERS; TUNGSTEN NITRIDES;

DIFFUSION IN SOLIDS;

EID: 0030235253     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08553-7     Document Type: Article

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