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Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 191-193

Deposition of WNxCy thin films by ALCVD™ method for diffusion barriers in metallization

(11) Li, Wei Min a Elers, Kai a Kostamo, Juhana a Kaipio, S a Huotari, H a Soininen, M a Soininen, P J a Tuominen, M a Haukka, S a Smith, S b Besling, W c

a ASM Microchemistry Oy (Finland)

b SEMATECH (United States)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARBIDES; CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; DIFFUSION BARRIERS; FILM GROWTH; METALLIZING; SILICON CARBIDE; SILICON WAFERS; THIN FILMS; TUNGSTEN CARBIDE; VAPOR DEPOSITION;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; COPPER METALLIZATION; DEPOSITION CONDITIONS; DETECTION LIMITS; DIFFERENT SUBSTRATES; ELECTRICAL TESTS; FILM COMPOSITION; TUNGSTEN NITRIDE CARBIDES;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961746344 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IITC.2002.1014930 Document Type: Conference Paper

Times cited : (20)

References (9)

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5
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- unpublished
- K.-E. Elers, V. Saanila, P.J. Soininen, W.-M. Li, J.T. Kostamo, S. Haukka, J. Juhanoja, W.F.A Besling, unpublished.
- Elers, K.-E.¹ Saanila, V.² Soininen, P.J.³ Li, W.-M.⁴ Kostamo, J.T.⁵ Haukka, S.⁶ Juhanoja, J.⁷ Besling, W.F.A.⁸

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9
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- in press
- S. Smith, W.-M. Li, H. Huotari, K.-E. Elers, K. Pfeifer, Microelectronic Engineering, in press.
- Microelectronic Engineering
- Smith, S.¹ Li, W.-M.² Huotari, H.³ Elers, K.-E.⁴ Pfeifer, K.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.