Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1033-1040

  Kelly, D Q ^a   Dey, S ^a   Onsongo, D ^b   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; ELECTRONS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRENGTH;

BANDGAP; BIAXIAL TENSION; CHANNEL MOBILITY; HOT-ELECTRON MOBILITY;

MOSFET DEVICES;

EID: 20344392655     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.01.011     Document Type: Article

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