Effects of strained layer near SiO2-Si interface on electrical characteristics of ultrathin gate oxides

Journal of Applied Physics

Volumn 87, Issue 4, 2000, Pages 1990-1995

  Eriguchi, Koji ^a   Harada, Yoshinao ^a   Niwa, Masaaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001211314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372125     Document Type: Article

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