The effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

Volumn 1, Issue , 2000, Pages 221-223

  Zenglang, Xia ^a   Yinbo, Li ^a   Yuanfu, Zhao ^a  

^a BEIJING MICROELECTRONICS TECHNOLOGY INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC FIELD EFFECTS; MOSFET DEVICES; OXIDES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE; MICROELECTRONICS;

BURIED OXIDE THICKNESS; CHANNEL REGION; DEEP SUB-MICRON; HOT CARRIER EFFECT; PEAK ELECTRIC FIELD; SELF-HEATING; SHORT-CHANNEL DEVICES; HOT CARRIER EFFECTS; SELF HEATING;

MICROELECTRONICS; HOT CARRIERS;

EID: 84906832331     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2000.840560     Document Type: Conference Paper

References (4)

1. Jianmi Cao, etc. "Hot-carrier Effects in Thin-film Deep Submicron SOI/MOSFET", journal of semiconductor, pp280-286,1998, Vol.4.
2. S. Tarn, P. Ko, and C. Hu, "Lucky-electron model of channel hot-electron injection in MOSFET's" ieee Trans. Electron Devices, vol. ed-31, pp. 1116-1125, Sep 1984.
3. Jianmi Cao, etc "Numerical Simulation of Hot-carrier Current in Thin-film SOI/MOSFET", Journal of Semiconductor, pp206-213, 1998, Vol.3.
4. Zenglang Xia, "Evaluation of Self-heating Effect in SOI/MOSFET", The paper for the academic meeting in Beijing Microelectronics Technology Institute, 1998.