Hot carrier degradation in novel strained-Si nMOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 18-22

  Lu, M F ^a   Chiang, Sinclair ^a   Liu, Alex ^a   Huang Lu, S ^a   Yeh, M S ^a   Hwang, J R ^a   Tang, T H ^a   Shiau, W ^a   Chen, M C ^b   Wang, Tahui ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hot carrier degradation; Short channel; Strained Si

Indexed keywords

RELIABILITY; SILICON;

HOT CARRIER DEGRADATION; LOW VOLTAGES; NMOSFETS; OPERATION VOLTAGE; RELIABILITY PROBLEMS; SHORT CHANNELS; SI DEVICES; STRAINED-SI;

HOT CARRIERS;

EID: 33748538163     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315295     Document Type: Conference Paper

References (9)

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