Excess hot-carrier currents in SOI MOSFETs and its implications

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 93-97

  Su, Pin ^a   Goto, Ken Ichi ^b   Sugii, T ^b   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

CMOS technology; Hot carriers; Impact ionization; Laboratories; MOSFETs; Silicon; Substrates; Temperature dependence; Thermal conductivity; Thermal resistance

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; ELECTRIC POWER SYSTEMS; HEAT RESISTANCE; HOT CARRIERS; IONIZATION; LABORATORIES; MOSFET DEVICES; SILICON; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY;

CMOS TECHNOLOGY; IONIZATION TRANSITIONS; LATTICE TEMPERATURES; LIFETIME EXTRAPOLATION; MOSFETS; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGIES; THERMAL TIME CONSTANTS;

IMPACT IONIZATION;

EID: 84949197613     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996615     Document Type: Conference Paper

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