Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 98-102

  Hsu, C T ^a   Lau, M M ^a   Yeow, Y T ^a   Yao, Z Q ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE TRAPS;

CAPACITANCE MEASUREMENT; ENERGY GAP; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0033748595     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)