Enhanced hot-electron performance of strained Si NMOS over unstrained Si

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 455-462

  Kelly, D Q ^a   Onsongo, D ^a   Dey, S ^a   Wise, R ^b   Cleavelin, R ^b   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Hot electron reliability; MOSFET; Strain; Strained Si

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRONS; GERMANIUM; HOT ELECTRONS; MOSFET DEVICES; RELIABILITY; STRAIN; TENSILE STRAIN;

CONDUCTION-BAND MINIMUM; EFFECTIVE MASS; HOT-ELECTRON DEGRADATIONS; MOS-FET; NMOSFETS; STRAINED-SI;

SILICON;

EID: 20344400446     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315371     Document Type: Conference Paper

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